Hillock assisted p-type enhancement in N-polar GaN:Mg films grown by MOCVD

We report on the enhanced incorporation efficiency of magnesium dopants into facets of hexagonal hillock structures in N-polar GaN, studied by comparative analysis of GaN:Mg films grown by MOCVD on high and low hillock density GaN template layers. Total magnesium concentration in planar regions surr...

Descripción completa

Detalles Bibliográficos
Autores principales: Rocco, Emma, Licata, Olivia, Mahaboob, Isra, Hogan, Kasey, Tozier, Sean, Meyers, Vincent, McEwen, Benjamin, Novak, Steven, Mazumder, Baishakhi, Reshchikov, Michael, Douglas Bell, L., Shahedipour-Sandvik, F.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6989458/
https://www.ncbi.nlm.nih.gov/pubmed/31996741
http://dx.doi.org/10.1038/s41598-020-58275-1

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6989458/
https://www.ncbi.nlm.nih.gov/pubmed/31996741
http://dx.doi.org/10.1038/s41598-020-58275-1

Ejemplares similares