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Effect of Ag Concentration Dispersed in HfO(x) Thin Films on Threshold Switching
A sneak path current—a current passing through a neighboring memory cell—is an inherent and inevitable problem in a crossbar array consisting of memristor memory cells. This serious problem can be alleviated by serially connecting the selector device to each memristor cell. Among the various types o...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Springer US
2020
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6990205/ https://www.ncbi.nlm.nih.gov/pubmed/32002695 http://dx.doi.org/10.1186/s11671-020-3258-6 |