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Effect of Ag Concentration Dispersed in HfO(x) Thin Films on Threshold Switching

A sneak path current—a current passing through a neighboring memory cell—is an inherent and inevitable problem in a crossbar array consisting of memristor memory cells. This serious problem can be alleviated by serially connecting the selector device to each memristor cell. Among the various types o...

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Detalles Bibliográficos
Autores principales:	Jeong, Won Hee, Han, Jeong Hwan, Choi, Byung Joon
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer US 2020
Materias:	Nano Express
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6990205/ https://www.ncbi.nlm.nih.gov/pubmed/32002695 http://dx.doi.org/10.1186/s11671-020-3258-6

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