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High-Speed and Direction-Controlled Formation of Silicon Nanowire Arrays Assisted by Electric Field

Metal-assisted chemical etching (MaCE), a low-cost and versatile method was considered a promising technique for preparing silicon nanowires (SiNWs), yet the lack of well controlling the injected holes within Si might reduce the etching rate, create the unwanted sidewall etching, and degrade the str...

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Detalles Bibliográficos
Autores principales: Chien, Pin-Ju, Wei, Ta-Cheng, Chen, Chia-Yun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6990330/
https://www.ncbi.nlm.nih.gov/pubmed/32002703
http://dx.doi.org/10.1186/s11671-020-3259-5