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High-Speed and Direction-Controlled Formation of Silicon Nanowire Arrays Assisted by Electric Field

Metal-assisted chemical etching (MaCE), a low-cost and versatile method was considered a promising technique for preparing silicon nanowires (SiNWs), yet the lack of well controlling the injected holes within Si might reduce the etching rate, create the unwanted sidewall etching, and degrade the str...

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Autores principales: Chien, Pin-Ju, Wei, Ta-Cheng, Chen, Chia-Yun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6990330/
https://www.ncbi.nlm.nih.gov/pubmed/32002703
http://dx.doi.org/10.1186/s11671-020-3259-5
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author Chien, Pin-Ju
Wei, Ta-Cheng
Chen, Chia-Yun
author_facet Chien, Pin-Ju
Wei, Ta-Cheng
Chen, Chia-Yun
author_sort Chien, Pin-Ju
collection PubMed
description Metal-assisted chemical etching (MaCE), a low-cost and versatile method was considered a promising technique for preparing silicon nanowires (SiNWs), yet the lack of well controlling the injected holes within Si might reduce the etching rate, create the unwanted sidewall etching, and degrade the structural uniformity. Herein, in this study, the bias-modulated MaCE process was performed, showing the etching rates more than four times of magnitude than that of typical bias-free MaCE with large-area uniformity. It was found that the field-mediated hole rectification overwhelmed the effect of retarded diffusivity from reactive ions, and thus the dynamics of distributed etching were therefore transferred to the directional etching behaviors. In addition, the etching orientation could be also manipulated with the external bias. The results demonstrated that the etching direction was switched toward the slanted features by varying the electric polarization, creating the special slanted/vertical NW arrays, which possessed the superior antireflection characteristics than the conventional vertically aligned features.
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spelling pubmed-69903302020-02-14 High-Speed and Direction-Controlled Formation of Silicon Nanowire Arrays Assisted by Electric Field Chien, Pin-Ju Wei, Ta-Cheng Chen, Chia-Yun Nanoscale Res Lett Nano Express Metal-assisted chemical etching (MaCE), a low-cost and versatile method was considered a promising technique for preparing silicon nanowires (SiNWs), yet the lack of well controlling the injected holes within Si might reduce the etching rate, create the unwanted sidewall etching, and degrade the structural uniformity. Herein, in this study, the bias-modulated MaCE process was performed, showing the etching rates more than four times of magnitude than that of typical bias-free MaCE with large-area uniformity. It was found that the field-mediated hole rectification overwhelmed the effect of retarded diffusivity from reactive ions, and thus the dynamics of distributed etching were therefore transferred to the directional etching behaviors. In addition, the etching orientation could be also manipulated with the external bias. The results demonstrated that the etching direction was switched toward the slanted features by varying the electric polarization, creating the special slanted/vertical NW arrays, which possessed the superior antireflection characteristics than the conventional vertically aligned features. Springer US 2020-01-30 /pmc/articles/PMC6990330/ /pubmed/32002703 http://dx.doi.org/10.1186/s11671-020-3259-5 Text en © The Author(s). 2020 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Nano Express
Chien, Pin-Ju
Wei, Ta-Cheng
Chen, Chia-Yun
High-Speed and Direction-Controlled Formation of Silicon Nanowire Arrays Assisted by Electric Field
title High-Speed and Direction-Controlled Formation of Silicon Nanowire Arrays Assisted by Electric Field
title_full High-Speed and Direction-Controlled Formation of Silicon Nanowire Arrays Assisted by Electric Field
title_fullStr High-Speed and Direction-Controlled Formation of Silicon Nanowire Arrays Assisted by Electric Field
title_full_unstemmed High-Speed and Direction-Controlled Formation of Silicon Nanowire Arrays Assisted by Electric Field
title_short High-Speed and Direction-Controlled Formation of Silicon Nanowire Arrays Assisted by Electric Field
title_sort high-speed and direction-controlled formation of silicon nanowire arrays assisted by electric field
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6990330/
https://www.ncbi.nlm.nih.gov/pubmed/32002703
http://dx.doi.org/10.1186/s11671-020-3259-5
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