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High-Speed and Direction-Controlled Formation of Silicon Nanowire Arrays Assisted by Electric Field
Metal-assisted chemical etching (MaCE), a low-cost and versatile method was considered a promising technique for preparing silicon nanowires (SiNWs), yet the lack of well controlling the injected holes within Si might reduce the etching rate, create the unwanted sidewall etching, and degrade the str...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2020
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6990330/ https://www.ncbi.nlm.nih.gov/pubmed/32002703 http://dx.doi.org/10.1186/s11671-020-3259-5 |