Analog Switching and Artificial Synaptic Behavior of Ag/SiO(x):Ag/TiO(x)/p(++)-Si Memristor Device

In this study, by inserting a buffer layer of TiO(x) between the SiO(x):Ag layer and the bottom electrode, we have developed a memristor device with a simple structure of Ag/SiO(x):Ag/TiO(x)/p(++)-Si by a physical vapor deposition process, in which the filament growth and rupture can be efficiently...

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Detalles Bibliográficos
Autores principales: Ilyas, Nasir, Li, Dongyang, Li, Chunmei, Jiang, Xiangdong, Jiang, Yadong, Li, Wei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2020
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6994582/
https://www.ncbi.nlm.nih.gov/pubmed/32006131
http://dx.doi.org/10.1186/s11671-020-3249-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6994582/
https://www.ncbi.nlm.nih.gov/pubmed/32006131
http://dx.doi.org/10.1186/s11671-020-3249-7

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