Cargando…
Analog Switching and Artificial Synaptic Behavior of Ag/SiO(x):Ag/TiO(x)/p(++)-Si Memristor Device
In this study, by inserting a buffer layer of TiO(x) between the SiO(x):Ag layer and the bottom electrode, we have developed a memristor device with a simple structure of Ag/SiO(x):Ag/TiO(x)/p(++)-Si by a physical vapor deposition process, in which the filament growth and rupture can be efficiently...
Autores principales: | , , , , , |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer US
2020
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6994582/ https://www.ncbi.nlm.nih.gov/pubmed/32006131 http://dx.doi.org/10.1186/s11671-020-3249-7 |
Sumario: | In this study, by inserting a buffer layer of TiO(x) between the SiO(x):Ag layer and the bottom electrode, we have developed a memristor device with a simple structure of Ag/SiO(x):Ag/TiO(x)/p(++)-Si by a physical vapor deposition process, in which the filament growth and rupture can be efficiently controlled during analog switching. The synaptic characteristics of the memristor device with a wide range of resistance change for weight modulation by implementing positive or negative pulse trains have been investigated extensively. Several learning and memory functions have been achieved simultaneously, including potentiation/depression, paired-pulse-facilitation (PPF), short-term plasticity (STP), and STP-to-LTP (long-term plasticity) transition controlled by repeating pulses more than a rehearsal operation, and spike-time-dependent-plasticity (STDP) as well. Based on the analysis of logarithmic I-V characteristics, it has been found that the controlled evolution/dissolution of conductive Ag-filaments across the dielectric layers can improve the performance of the testing memristor device. |
---|