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Analog Switching and Artificial Synaptic Behavior of Ag/SiO(x):Ag/TiO(x)/p(++)-Si Memristor Device
In this study, by inserting a buffer layer of TiO(x) between the SiO(x):Ag layer and the bottom electrode, we have developed a memristor device with a simple structure of Ag/SiO(x):Ag/TiO(x)/p(++)-Si by a physical vapor deposition process, in which the filament growth and rupture can be efficiently...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6994582/ https://www.ncbi.nlm.nih.gov/pubmed/32006131 http://dx.doi.org/10.1186/s11671-020-3249-7 |