Electronic structure of AlFeN films exhibiting crystallographic orientation change from c- to a-axis with Fe concentrations and annealing effect

Wurtzite AlN film is a promising material for deep ultraviolet light-emitting diodes. However, some properties that attribute to its crystal orientation, i.e., c-axis orientation, are obstacles in realizing high efficiency devices. Constructing devices with non-c-axis oriented films is a solution to...

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Detalles Bibliográficos
Autores principales: Tatemizo, Nobuyuki, Imada, Saki, Okahara, Kizuna, Nishikawa, Haruki, Tsuruta, Kazuki, Ina, Toshiaki, Miura, Yoshio, Nishio, Koji, Isshiki, Toshiyuki
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7000734/
https://www.ncbi.nlm.nih.gov/pubmed/32020058
http://dx.doi.org/10.1038/s41598-020-58835-5

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7000734/
https://www.ncbi.nlm.nih.gov/pubmed/32020058
http://dx.doi.org/10.1038/s41598-020-58835-5

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