Influence of Annealing Atmosphere on the Characteristics of Ga(2)O(3)/4H-SiC n-n Heterojunction Diodes

Ga(2)O(3)/4H-SiC n-n isotype heterojunction diodes were fabricated by depositing Ga(2)O(3) thin films by RF magnetron sputtering. The influence of annealing atmosphere on the film quality and electrical properties of Ga(2)O(3) layers was investigated. X-ray diffraction (XRD) analysis showed a signif...

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Detalles Bibliográficos
Autores principales: Lee, Young-Jae, Schweitz, Michael A., Oh, Jong-Min, Koo, Sang-Mo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7013600/
https://www.ncbi.nlm.nih.gov/pubmed/31963320
http://dx.doi.org/10.3390/ma13020434

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7013600/
https://www.ncbi.nlm.nih.gov/pubmed/31963320
http://dx.doi.org/10.3390/ma13020434

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