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Influence of Annealing Atmosphere on the Characteristics of Ga(2)O(3)/4H-SiC n-n Heterojunction Diodes
Ga(2)O(3)/4H-SiC n-n isotype heterojunction diodes were fabricated by depositing Ga(2)O(3) thin films by RF magnetron sputtering. The influence of annealing atmosphere on the film quality and electrical properties of Ga(2)O(3) layers was investigated. X-ray diffraction (XRD) analysis showed a signif...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7013600/ https://www.ncbi.nlm.nih.gov/pubmed/31963320 http://dx.doi.org/10.3390/ma13020434 |