Using a Multi-Layer Stacked AlGaN/GaN Structure to Improve the Current Spreading Performance of Ultraviolet Light-Emitting Diodes

To obtain excellent current spreading performance of ultraviolet light-emitting diodes (UVLEDs), a 60-period stacked Si modulation-doped n-AlGaN/u-GaN structure is proposed to replace the traditional n-AlGaN structure. The high-resolution X-ray diffraction ω-scan rocking curves show that the periodi...

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Detalles Bibliográficos
Autores principales: Wang, Yanli, Li, Peixian, Zhang, Xinyu, Xu, Shengrui, Zhou, Xiaowei, Wu, Jinxing, Yue, Wenkai, Hao, Yue
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7013919/
https://www.ncbi.nlm.nih.gov/pubmed/31963566
http://dx.doi.org/10.3390/ma13020454

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7013919/
https://www.ncbi.nlm.nih.gov/pubmed/31963566
http://dx.doi.org/10.3390/ma13020454

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