A Stacked Back Side-Illuminated Voltage Domain Global Shutter CMOS Image Sensor with a 4.0 μm Multiple Gain Readout Pixel †

A backside-illuminated complementary metal-oxide-semiconductor (CMOS) image sensor with 4.0 μm voltage domain global shutter (GS) pixels has been fabricated in a 45 nm/65 nm stacked CMOS process as a proof-of-concept vehicle. The pixel components for the photon-to-voltage conversion are formed on th...

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Detalles Bibliográficos
Autores principales: Miyauchi, Ken, Mori, Kazuya, Otaka, Toshinori, Isozaki, Toshiyuki, Yasuda, Naoto, Tsai, Alex, Sawai, Yusuke, Owada, Hideki, Takayanagi, Isao, Nakamura, Junichi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7014098/
https://www.ncbi.nlm.nih.gov/pubmed/31952205
http://dx.doi.org/10.3390/s20020486

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7014098/
https://www.ncbi.nlm.nih.gov/pubmed/31952205
http://dx.doi.org/10.3390/s20020486

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