In Situ Doping of Nitrogen in <110>-Oriented Bulk 3C-SiC by Halide Laser Chemical Vapour Deposition

Doping of nitrogen is a promising approach to improve the electrical conductivity of 3C-SiC and allow its application in various fields. N-doped, <110>-oriented 3C-SiC bulks with different doping concentrations were prepared via halide laser chemical vapour deposition (HLCVD) using tetrachloro...

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Detalles Bibliográficos
Autores principales: Lai, Youfeng, Xia, Lixue, Xu, Qingfang, Li, Qizhong, Liu, Kai, Yang, Meijun, Zhang, Song, Han, Mingxu, Goto, Takashi, Zhang, Lianmeng, Tu, Rong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7014435/
https://www.ncbi.nlm.nih.gov/pubmed/31952320
http://dx.doi.org/10.3390/ma13020410

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7014435/
https://www.ncbi.nlm.nih.gov/pubmed/31952320
http://dx.doi.org/10.3390/ma13020410

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