Scalable ultrafast epitaxy of large-grain and single-crystal II-VI semiconductors

A general problem for semiconductor applications is that very slow deposition on expensive single-crystal substrates yields high crystalline quality with excellent electro-optical properties, but at prohibitive costs and throughput for many applications. In contrast, rapid deposition on inexpensive...

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Detalles Bibliográficos
Autores principales: Colegrove, Eric, Albin, David S., Moutinho, Helio R., Amarasinghe, Mahisha, Burst, James M., Metzger, Wyatt K.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7016132/
https://www.ncbi.nlm.nih.gov/pubmed/32051449
http://dx.doi.org/10.1038/s41598-020-59083-3

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7016132/
https://www.ncbi.nlm.nih.gov/pubmed/32051449
http://dx.doi.org/10.1038/s41598-020-59083-3

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