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Scalable ultrafast epitaxy of large-grain and single-crystal II-VI semiconductors
A general problem for semiconductor applications is that very slow deposition on expensive single-crystal substrates yields high crystalline quality with excellent electro-optical properties, but at prohibitive costs and throughput for many applications. In contrast, rapid deposition on inexpensive...
Autores principales: | Colegrove, Eric, Albin, David S., Moutinho, Helio R., Amarasinghe, Mahisha, Burst, James M., Metzger, Wyatt K. |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7016132/ https://www.ncbi.nlm.nih.gov/pubmed/32051449 http://dx.doi.org/10.1038/s41598-020-59083-3 |
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