Ultra-long carrier lifetime in neutral graphene-hBN van der Waals heterostructures under mid-infrared illumination

Graphene/hBN heterostructures are promising active materials for devices in the THz domain, such as emitters and photodetectors based on interband transitions. Their performance requires long carrier lifetimes. However, carrier recombination processes in graphene possess sub-picosecond characteristi...

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Detalles Bibliográficos
Autores principales: Huang, P., Riccardi, E., Messelot, S., Graef, H., Valmorra, F., Tignon, J., Taniguchi, T., Watanabe, K., Dhillon, S., Plaçais, B., Ferreira, R., Mangeney, J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7018796/
https://www.ncbi.nlm.nih.gov/pubmed/32054848
http://dx.doi.org/10.1038/s41467-020-14714-1

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7018796/
https://www.ncbi.nlm.nih.gov/pubmed/32054848
http://dx.doi.org/10.1038/s41467-020-14714-1

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