Improved DRUS 4H-SiC MESFET with High Power Added Efficiency

A 4H-SiC metal semiconductor field effect transistor (MESFET) with layered doping and undoped space regions (LDUS-MESFET) is proposed and simulated by ADS and ISE-TCAD software in this paper. The structure (LDUS-MESFET) introduced layered doping under the lower gate of the channel, while optimizing...

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Detalles Bibliográficos
Autores principales: Jia, Hujun, Liang, Yuan, Li, Tao, Tong, Yibo, Zhu, Shunwei, Wang, Xingyu, Zeng, Tonghui, Yang, Yintang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7019380/
https://www.ncbi.nlm.nih.gov/pubmed/31892117
http://dx.doi.org/10.3390/mi11010035

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7019380/
https://www.ncbi.nlm.nih.gov/pubmed/31892117
http://dx.doi.org/10.3390/mi11010035

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