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Improved DRUS 4H-SiC MESFET with High Power Added Efficiency
A 4H-SiC metal semiconductor field effect transistor (MESFET) with layered doping and undoped space regions (LDUS-MESFET) is proposed and simulated by ADS and ISE-TCAD software in this paper. The structure (LDUS-MESFET) introduced layered doping under the lower gate of the channel, while optimizing...
Autores principales: | Jia, Hujun, Liang, Yuan, Li, Tao, Tong, Yibo, Zhu, Shunwei, Wang, Xingyu, Zeng, Tonghui, Yang, Yintang |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2019
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7019380/ https://www.ncbi.nlm.nih.gov/pubmed/31892117 http://dx.doi.org/10.3390/mi11010035 |
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