Thermal Analysis and Operational Characteristics of an AlGaN/GaN High Electron Mobility Transistor with Copper-Filled Structures: A Simulation Study

In this study, we investigated the operational characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) by applying the copper-filled trench and via structures for improved heat dissipation. Therefore, we used a basic T-gate HEMT device to construct the thermal structures. To identify...

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Detalles Bibliográficos
Autores principales: Jang, Kyu-Won, Hwang, In-Tae, Kim, Hyun-Jung, Lee, Sang-Heung, Lim, Jong-Won, Kim, Hyun-Seok
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7019654/
https://www.ncbi.nlm.nih.gov/pubmed/31906083
http://dx.doi.org/10.3390/mi11010053

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7019654/
https://www.ncbi.nlm.nih.gov/pubmed/31906083
http://dx.doi.org/10.3390/mi11010053

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