Modeling and Analysis of v(gs) Characteristics for Upper-Side and Lower-Side Switches at Turn-on Transients for a 1200V/200A Full-SiC Power Module

In this work, a 1200V/200A full-SiC half-bridge power module was fabricated for high-power high-frequency application, and the characteristics of gate-source voltage ([Formula: see text]) at turn-on transient under different output power was investigated via experiments, modeling, and simulation. Al...

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Detalles Bibliográficos
Autores principales: Zhang, Maosheng, Ren, Na, Guo, Qing, Zhu, Xiangwen, Zhang, Junming, Sheng, Kuang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7019688/
https://www.ncbi.nlm.nih.gov/pubmed/31861314
http://dx.doi.org/10.3390/mi11010005

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7019688/
https://www.ncbi.nlm.nih.gov/pubmed/31861314
http://dx.doi.org/10.3390/mi11010005

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