Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment

We investigated the origin of vertical leakage and breakdown in GaN-on-Si epitaxial structures. In order to understand the role of the nucleation layer, AlGaN buffer, and C-doped GaN, we designed a sequential growth experiment. Specifically, we analyzed three different structures grown on silicon su...

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Detalles Bibliográficos
Autores principales: Tajalli, Alaleh, Borga, Matteo, Meneghini, Matteo, De Santi, Carlo, Benazzi, Davide, Besendörfer, Sven, Püsche, Roland, Derluyn, Joff, Degroote, Stefan, Germain, Marianne, Kabouche, Riad, Abid, Idriss, Meissner, Elke, Zanoni, Enrico, Medjdoub, Farid, Meneghesso, Gaudenzio
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7019869/
https://www.ncbi.nlm.nih.gov/pubmed/31963553
http://dx.doi.org/10.3390/mi11010101

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7019869/
https://www.ncbi.nlm.nih.gov/pubmed/31963553
http://dx.doi.org/10.3390/mi11010101

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