T-Channel Field Effect Transistor with Three Input Terminals (Ti-TcFET)

In this paper, a novel T-channel field effect transistor with three input terminals (Ti-TcFET) is proposed. The channel of a Ti-TcFET consists of horizontal and vertical sections. The top gate is above the horizontal channel, while the front gate and back gate are on either side of the vertical chan...

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Detalles Bibliográficos
Autores principales: Chen, Zeqi, Hu, Jianping, Ye, Hao, Chu, Zhufei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7019956/
https://www.ncbi.nlm.nih.gov/pubmed/31936107
http://dx.doi.org/10.3390/mi11010064

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7019956/
https://www.ncbi.nlm.nih.gov/pubmed/31936107
http://dx.doi.org/10.3390/mi11010064

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