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Correction: Park, J.; et al. Fine-Grained Power Gating Using an MRAM-CMOS Non-Volatile Flip-Flop. Micromachines 2019, 10, 411
Autores principales: | Park, Jaeyoung, Yim, Young Uk |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2019
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7019980/ https://www.ncbi.nlm.nih.gov/pubmed/31861608 http://dx.doi.org/10.3390/mi11010011 |
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