Transient Simulation for the Thermal Design Optimization of Pulse Operated AlGaN/GaN HEMTs

The thermal management and channel temperature evaluation of GaN power amplifiers are indispensable issues in engineering field. The transient thermal characteristics of pulse operated AlGaN/GaN high electron mobility transistors (HEMT) used in high power amplifiers are systematically investigated b...

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Detalles Bibliográficos
Autores principales: Guo, Huaixin, Chen, Tangsheng, Shi, Shang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7020000/
https://www.ncbi.nlm.nih.gov/pubmed/31936651
http://dx.doi.org/10.3390/mi11010076

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7020000/
https://www.ncbi.nlm.nih.gov/pubmed/31936651
http://dx.doi.org/10.3390/mi11010076

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