Self-Alignment of Bottom CZTSSe by Patterning of an Al(2)O(3) Intermediate Layer

When CZTSSe is synthesized using a metal precursor, large voids of nonuniform size form at Mo back contact side. Herein, we demonstrate that the voids and CZTSSe in the lower part of the CZTSSe double layer can be controlled by using an Al(2)O(3)-patterned Mo substrate. The CZTSSe in the lower part...

Descripción completa

Detalles Bibliográficos
Autores principales: Hong, Sanghun, Kim, Se-Yun, Son, Dae-Ho, Kim, Seung-Hyun, Kim, Young-Ill, Yang, Kee-Jeong, Heo, Young-Woo, Kang, Jin-Kyu, Kim, Dae-Hwan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7022898/
https://www.ncbi.nlm.nih.gov/pubmed/31878052
http://dx.doi.org/10.3390/nano10010043

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7022898/
https://www.ncbi.nlm.nih.gov/pubmed/31878052
http://dx.doi.org/10.3390/nano10010043

Ejemplares similares