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Self-Alignment of Bottom CZTSSe by Patterning of an Al(2)O(3) Intermediate Layer
When CZTSSe is synthesized using a metal precursor, large voids of nonuniform size form at Mo back contact side. Herein, we demonstrate that the voids and CZTSSe in the lower part of the CZTSSe double layer can be controlled by using an Al(2)O(3)-patterned Mo substrate. The CZTSSe in the lower part...
| Autores principales: | , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7022898/ https://www.ncbi.nlm.nih.gov/pubmed/31878052 http://dx.doi.org/10.3390/nano10010043 |