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High Performance All Nonmetal SiN(x) Resistive Random Access Memory with Strong Process Dependence
All-nonmetal resistive random access memory (RRAM) with a N(+)–Si/SiN(x)/P(+)–Si structure was investigated in this study. The device performance of SiN(x) developed using physical vapor deposition (PVD) was significantly better than that of a device fabricated using plasma-enhanced chemical vapor d...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7028907/ https://www.ncbi.nlm.nih.gov/pubmed/32071358 http://dx.doi.org/10.1038/s41598-020-59838-y |