Ultrashort Vertical‐Channel van der Waals Semiconductor Transistors

Atomically thin 2D van der Waals semiconductors are promising candidates for next‐generation nanoscale field‐effect transistors (FETs). Although large‐area 2D van der Waals materials have been successfully synthesized, such nanometer‐length‐scale devices have not been well demonstrated in 2D van der...

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Detalles Bibliográficos
Autores principales: Jiang, Jinbao, Doan, Manh‐Ha, Sun, Linfeng, Kim, Hyun, Yu, Hua, Joo, Min‐Kyu, Park, Sang Hyun, Yang, Heejun, Duong, Dinh Loc, Lee, Young Hee
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2019
Materias:
Communications
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7029639/
https://www.ncbi.nlm.nih.gov/pubmed/32099767
http://dx.doi.org/10.1002/advs.201902964

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7029639/
https://www.ncbi.nlm.nih.gov/pubmed/32099767
http://dx.doi.org/10.1002/advs.201902964

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