Fully Depleted, Trench-Pinned Photo Gate for CMOS Image Sensor Applications

Tackling issues of implantation-caused defects and contamination, this paper presents a new complementary metal–oxide–semiconductor (CMOS) image sensor (CIS) pixel design concept based on a native epitaxial layer for photon detection, charge storage, and charge transfer to the sensing node. To prove...

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Detalles Bibliográficos
Autores principales: Roy, Francois, Suler, Andrej, Dalleau, Thomas, Duru, Romain, Benoit, Daniel, Arnaud, Jihane, Cazaux, Yvon, Chaton, Catherine, Montes, Laurent, Morfouli, Panagiota, Lu, Guo-Neng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7038367/
https://www.ncbi.nlm.nih.gov/pubmed/32012978
http://dx.doi.org/10.3390/s20030727

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7038367/
https://www.ncbi.nlm.nih.gov/pubmed/32012978
http://dx.doi.org/10.3390/s20030727

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