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Resistive switching studies in VO(2) thin films

The hysteretic insulator-to-metal transition of VO(2) is studied in detail for pulsed laser deposition grown thin films on TiO(2) substrates, under variation of temperature and applied bias currents. This system is of interest for novel electronics based on memristive concepts, in particular as the...

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Detalles Bibliográficos
Autores principales: Rana, Abhimanyu, Li, Chuan, Koster, Gertjan, Hilgenkamp, Hans
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7040009/
https://www.ncbi.nlm.nih.gov/pubmed/32094385
http://dx.doi.org/10.1038/s41598-020-60373-z