Resistive switching studies in VO(2) thin films

The hysteretic insulator-to-metal transition of VO(2) is studied in detail for pulsed laser deposition grown thin films on TiO(2) substrates, under variation of temperature and applied bias currents. This system is of interest for novel electronics based on memristive concepts, in particular as the...

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Detalles Bibliográficos
Autores principales: Rana, Abhimanyu, Li, Chuan, Koster, Gertjan, Hilgenkamp, Hans
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7040009/
https://www.ncbi.nlm.nih.gov/pubmed/32094385
http://dx.doi.org/10.1038/s41598-020-60373-z
Descripción
Sumario:The hysteretic insulator-to-metal transition of VO(2) is studied in detail for pulsed laser deposition grown thin films on TiO(2) substrates, under variation of temperature and applied bias currents. This system is of interest for novel electronics based on memristive concepts, in particular as the resistive transition in these films occurs close to room temperature. Multiple, stable resistance states can be set controllably in the temperature range of the hysteretic phase transition by tailored temperature sweeps or by Joule heating induced by current pulses.

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