Cargando…

Resistive switching studies in VO(2) thin films

The hysteretic insulator-to-metal transition of VO(2) is studied in detail for pulsed laser deposition grown thin films on TiO(2) substrates, under variation of temperature and applied bias currents. This system is of interest for novel electronics based on memristive concepts, in particular as the...

Descripción completa

Detalles Bibliográficos
Autores principales: Rana, Abhimanyu, Li, Chuan, Koster, Gertjan, Hilgenkamp, Hans
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7040009/
https://www.ncbi.nlm.nih.gov/pubmed/32094385
http://dx.doi.org/10.1038/s41598-020-60373-z
_version_ 1783500901258887168
author Rana, Abhimanyu
Li, Chuan
Koster, Gertjan
Hilgenkamp, Hans
author_facet Rana, Abhimanyu
Li, Chuan
Koster, Gertjan
Hilgenkamp, Hans
author_sort Rana, Abhimanyu
collection PubMed
description The hysteretic insulator-to-metal transition of VO(2) is studied in detail for pulsed laser deposition grown thin films on TiO(2) substrates, under variation of temperature and applied bias currents. This system is of interest for novel electronics based on memristive concepts, in particular as the resistive transition in these films occurs close to room temperature. Multiple, stable resistance states can be set controllably in the temperature range of the hysteretic phase transition by tailored temperature sweeps or by Joule heating induced by current pulses.
format Online
Article
Text
id pubmed-7040009
institution National Center for Biotechnology Information
language English
publishDate 2020
publisher Nature Publishing Group UK
record_format MEDLINE/PubMed
spelling pubmed-70400092020-03-03 Resistive switching studies in VO(2) thin films Rana, Abhimanyu Li, Chuan Koster, Gertjan Hilgenkamp, Hans Sci Rep Article The hysteretic insulator-to-metal transition of VO(2) is studied in detail for pulsed laser deposition grown thin films on TiO(2) substrates, under variation of temperature and applied bias currents. This system is of interest for novel electronics based on memristive concepts, in particular as the resistive transition in these films occurs close to room temperature. Multiple, stable resistance states can be set controllably in the temperature range of the hysteretic phase transition by tailored temperature sweeps or by Joule heating induced by current pulses. Nature Publishing Group UK 2020-02-24 /pmc/articles/PMC7040009/ /pubmed/32094385 http://dx.doi.org/10.1038/s41598-020-60373-z Text en © The Author(s) 2020 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Rana, Abhimanyu
Li, Chuan
Koster, Gertjan
Hilgenkamp, Hans
Resistive switching studies in VO(2) thin films
title Resistive switching studies in VO(2) thin films
title_full Resistive switching studies in VO(2) thin films
title_fullStr Resistive switching studies in VO(2) thin films
title_full_unstemmed Resistive switching studies in VO(2) thin films
title_short Resistive switching studies in VO(2) thin films
title_sort resistive switching studies in vo(2) thin films
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7040009/
https://www.ncbi.nlm.nih.gov/pubmed/32094385
http://dx.doi.org/10.1038/s41598-020-60373-z
work_keys_str_mv AT ranaabhimanyu resistiveswitchingstudiesinvo2thinfilms
AT lichuan resistiveswitchingstudiesinvo2thinfilms
AT kostergertjan resistiveswitchingstudiesinvo2thinfilms
AT hilgenkamphans resistiveswitchingstudiesinvo2thinfilms