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Resistive switching studies in VO(2) thin films
The hysteretic insulator-to-metal transition of VO(2) is studied in detail for pulsed laser deposition grown thin films on TiO(2) substrates, under variation of temperature and applied bias currents. This system is of interest for novel electronics based on memristive concepts, in particular as the...
Autores principales: | , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7040009/ https://www.ncbi.nlm.nih.gov/pubmed/32094385 http://dx.doi.org/10.1038/s41598-020-60373-z |