A Novel Dry Selective Isotropic Atomic Layer Etching of SiGe for Manufacturing Vertical Nanowire Array with Diameter Less than 20 nm

Semiconductor nanowires have great application prospects in field effect transistors and sensors. In this study, the process and challenges of manufacturing vertical SiGe/Si nanowire array by using the conventional lithography and novel dry atomic layer etching technology. The final results demonstr...

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Detalles Bibliográficos
Autores principales: Li, Junjie, Li, Yongliang, Zhou, Na, Wang, Guilei, Zhang, Qingzhu, Du, Anyan, Zhang, Yongkui, Gao, Jianfeng, Kong, Zhenzhen, Lin, Hongxiao, Xiang, Jinjuan, Li, Chen, Yin, Xiaogen, Li, Yangyang, Wang, Xiaolei, Yang, Hong, Ma, Xueli, Han, Jianghao, Zhang, Jing, Hu, Tairan, Yang, Tao, Li, Junfeng, Yin, Huaxiang, Zhu, Huilong, Wang, Wenwu, Radamson, Henry H.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7040590/
https://www.ncbi.nlm.nih.gov/pubmed/32046197
http://dx.doi.org/10.3390/ma13030771

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7040590/
https://www.ncbi.nlm.nih.gov/pubmed/32046197
http://dx.doi.org/10.3390/ma13030771

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