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A Novel Dry Selective Isotropic Atomic Layer Etching of SiGe for Manufacturing Vertical Nanowire Array with Diameter Less than 20 nm
Semiconductor nanowires have great application prospects in field effect transistors and sensors. In this study, the process and challenges of manufacturing vertical SiGe/Si nanowire array by using the conventional lithography and novel dry atomic layer etching technology. The final results demonstr...
| Autores principales: | , , , , , , , , , , , , , , , , , , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7040590/ https://www.ncbi.nlm.nih.gov/pubmed/32046197 http://dx.doi.org/10.3390/ma13030771 |
| _version_ | 1783501021326082048 |
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| author | Li, Junjie Li, Yongliang Zhou, Na Wang, Guilei Zhang, Qingzhu Du, Anyan Zhang, Yongkui Gao, Jianfeng Kong, Zhenzhen Lin, Hongxiao Xiang, Jinjuan Li, Chen Yin, Xiaogen Li, Yangyang Wang, Xiaolei Yang, Hong Ma, Xueli Han, Jianghao Zhang, Jing Hu, Tairan Yang, Tao Li, Junfeng Yin, Huaxiang Zhu, Huilong Wang, Wenwu Radamson, Henry H. |
| author_facet | Li, Junjie Li, Yongliang Zhou, Na Wang, Guilei Zhang, Qingzhu Du, Anyan Zhang, Yongkui Gao, Jianfeng Kong, Zhenzhen Lin, Hongxiao Xiang, Jinjuan Li, Chen Yin, Xiaogen Li, Yangyang Wang, Xiaolei Yang, Hong Ma, Xueli Han, Jianghao Zhang, Jing Hu, Tairan Yang, Tao Li, Junfeng Yin, Huaxiang Zhu, Huilong Wang, Wenwu Radamson, Henry H. |
| author_sort | Li, Junjie |
| collection | PubMed |
| description | Semiconductor nanowires have great application prospects in field effect transistors and sensors. In this study, the process and challenges of manufacturing vertical SiGe/Si nanowire array by using the conventional lithography and novel dry atomic layer etching technology. The final results demonstrate that vertical nanowires with a diameter less than 20 nm can be obtained. The diameter of nanowires is adjustable with an accuracy error less than 0.3 nm. This technology provides a new way for advanced 3D transistors and sensors. |
| format | Online Article Text |
| id | pubmed-7040590 |
| institution | National Center for Biotechnology Information |
| language | English |
| publishDate | 2020 |
| publisher | MDPI |
| record_format | MEDLINE/PubMed |
| spelling | pubmed-70405902020-03-09 A Novel Dry Selective Isotropic Atomic Layer Etching of SiGe for Manufacturing Vertical Nanowire Array with Diameter Less than 20 nm Li, Junjie Li, Yongliang Zhou, Na Wang, Guilei Zhang, Qingzhu Du, Anyan Zhang, Yongkui Gao, Jianfeng Kong, Zhenzhen Lin, Hongxiao Xiang, Jinjuan Li, Chen Yin, Xiaogen Li, Yangyang Wang, Xiaolei Yang, Hong Ma, Xueli Han, Jianghao Zhang, Jing Hu, Tairan Yang, Tao Li, Junfeng Yin, Huaxiang Zhu, Huilong Wang, Wenwu Radamson, Henry H. Materials (Basel) Article Semiconductor nanowires have great application prospects in field effect transistors and sensors. In this study, the process and challenges of manufacturing vertical SiGe/Si nanowire array by using the conventional lithography and novel dry atomic layer etching technology. The final results demonstrate that vertical nanowires with a diameter less than 20 nm can be obtained. The diameter of nanowires is adjustable with an accuracy error less than 0.3 nm. This technology provides a new way for advanced 3D transistors and sensors. MDPI 2020-02-07 /pmc/articles/PMC7040590/ /pubmed/32046197 http://dx.doi.org/10.3390/ma13030771 Text en © 2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
| spellingShingle | Article Li, Junjie Li, Yongliang Zhou, Na Wang, Guilei Zhang, Qingzhu Du, Anyan Zhang, Yongkui Gao, Jianfeng Kong, Zhenzhen Lin, Hongxiao Xiang, Jinjuan Li, Chen Yin, Xiaogen Li, Yangyang Wang, Xiaolei Yang, Hong Ma, Xueli Han, Jianghao Zhang, Jing Hu, Tairan Yang, Tao Li, Junfeng Yin, Huaxiang Zhu, Huilong Wang, Wenwu Radamson, Henry H. A Novel Dry Selective Isotropic Atomic Layer Etching of SiGe for Manufacturing Vertical Nanowire Array with Diameter Less than 20 nm |
| title | A Novel Dry Selective Isotropic Atomic Layer Etching of SiGe for Manufacturing Vertical Nanowire Array with Diameter Less than 20 nm |
| title_full | A Novel Dry Selective Isotropic Atomic Layer Etching of SiGe for Manufacturing Vertical Nanowire Array with Diameter Less than 20 nm |
| title_fullStr | A Novel Dry Selective Isotropic Atomic Layer Etching of SiGe for Manufacturing Vertical Nanowire Array with Diameter Less than 20 nm |
| title_full_unstemmed | A Novel Dry Selective Isotropic Atomic Layer Etching of SiGe for Manufacturing Vertical Nanowire Array with Diameter Less than 20 nm |
| title_short | A Novel Dry Selective Isotropic Atomic Layer Etching of SiGe for Manufacturing Vertical Nanowire Array with Diameter Less than 20 nm |
| title_sort | novel dry selective isotropic atomic layer etching of sige for manufacturing vertical nanowire array with diameter less than 20 nm |
| topic | Article |
| url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7040590/ https://www.ncbi.nlm.nih.gov/pubmed/32046197 http://dx.doi.org/10.3390/ma13030771 |
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