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Controlling the layer localization of gapless states in bilayer graphene with a gate voltage
Experiments in gated bilayer graphene with stacking domain walls present topological gapless states protected by no-valley mixing. Here we research these states under gate voltages using atomistic models, which allow us to elucidate their origin. We find that the gate potential controls the layer lo...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
2018
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7047727/ https://www.ncbi.nlm.nih.gov/pubmed/32117572 http://dx.doi.org/10.1088/2053-1583/aaa490 |