Toward ultimate nonvolatile resistive memories: The mechanism behind ovonic threshold switching revealed

Fifty years after its discovery, the ovonic threshold switching (OTS) phenomenon, a unique nonlinear conductivity behavior observed in some chalcogenide glasses, has been recently the source of a real technological breakthrough in the field of data storage memories. This breakthrough was achieved be...

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Detalles Bibliográficos
Autores principales: Noé, Pierre, Verdy, Anthonin, d’Acapito, Francesco, Dory, Jean-Baptiste, Bernard, Mathieu, Navarro, Gabriele, Jager, Jean-Baptiste, Gaudin, Jérôme, Raty, Jean-Yves
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Association for the Advancement of Science 2020
Materias:
Research Articles
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7048425/
https://www.ncbi.nlm.nih.gov/pubmed/32158940
http://dx.doi.org/10.1126/sciadv.aay2830

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7048425/
https://www.ncbi.nlm.nih.gov/pubmed/32158940
http://dx.doi.org/10.1126/sciadv.aay2830

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