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Toward ultimate nonvolatile resistive memories: The mechanism behind ovonic threshold switching revealed
Fifty years after its discovery, the ovonic threshold switching (OTS) phenomenon, a unique nonlinear conductivity behavior observed in some chalcogenide glasses, has been recently the source of a real technological breakthrough in the field of data storage memories. This breakthrough was achieved be...
| Autores principales: | , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Association for the Advancement of Science
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7048425/ https://www.ncbi.nlm.nih.gov/pubmed/32158940 http://dx.doi.org/10.1126/sciadv.aay2830 |