Effective Schottky barrier lowering of NiGe/p-Ge(100) using Terbium interlayer structure for high performance p-type MOSFETs

Ultra-low contact resistance at the interface between NiGe and p-Ge, i.e., NiGe/p-Ge was achieved by introducing terbium (Tb) as an interlayer in forming NiGe using Tb/Ni/TiN structure. The contact resistance value obtained using the circular transmission line model for an 8-nm thick Tb interlayer s...

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Detalles Bibliográficos
Autores principales: Eadi, Sunil Babu, Lee, Jeong Chan, Song, Hyeong-Sub, Oh, Jungwoo, Lee, Ga-Won, Lee, Hi-Deok
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7055356/
https://www.ncbi.nlm.nih.gov/pubmed/32132595
http://dx.doi.org/10.1038/s41598-020-61011-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7055356/
https://www.ncbi.nlm.nih.gov/pubmed/32132595
http://dx.doi.org/10.1038/s41598-020-61011-4

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