A FinFET with one atomic layer channel

Since its invention in the 1960s, one of the most significant evolutions of metal-oxide-semiconductor field effect transistors (MOS-FETs) would be the three dimensionalized version that makes the semiconducting channel vertically wrapped by conformal gate electrodes, also recognized as FinFET. Durin...

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Detalles Bibliográficos
Autores principales: Chen, Mao-Lin, Sun, Xingdan, Liu, Hang, Wang, Hanwen, Zhu, Qianbing, Wang, Shasha, Du, Haifeng, Dong, Baojuan, Zhang, Jing, Sun, Yun, Qiu, Song, Alava, Thomas, Liu, Song, Sun, Dong-Ming, Han, Zheng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7058032/
https://www.ncbi.nlm.nih.gov/pubmed/32139679
http://dx.doi.org/10.1038/s41467-020-15096-0

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7058032/
https://www.ncbi.nlm.nih.gov/pubmed/32139679
http://dx.doi.org/10.1038/s41467-020-15096-0

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