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A FinFET with one atomic layer channel
Since its invention in the 1960s, one of the most significant evolutions of metal-oxide-semiconductor field effect transistors (MOS-FETs) would be the three dimensionalized version that makes the semiconducting channel vertically wrapped by conformal gate electrodes, also recognized as FinFET. Durin...
Autores principales: | , , , , , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7058032/ https://www.ncbi.nlm.nih.gov/pubmed/32139679 http://dx.doi.org/10.1038/s41467-020-15096-0 |
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author | Chen, Mao-Lin Sun, Xingdan Liu, Hang Wang, Hanwen Zhu, Qianbing Wang, Shasha Du, Haifeng Dong, Baojuan Zhang, Jing Sun, Yun Qiu, Song Alava, Thomas Liu, Song Sun, Dong-Ming Han, Zheng |
author_facet | Chen, Mao-Lin Sun, Xingdan Liu, Hang Wang, Hanwen Zhu, Qianbing Wang, Shasha Du, Haifeng Dong, Baojuan Zhang, Jing Sun, Yun Qiu, Song Alava, Thomas Liu, Song Sun, Dong-Ming Han, Zheng |
author_sort | Chen, Mao-Lin |
collection | PubMed |
description | Since its invention in the 1960s, one of the most significant evolutions of metal-oxide-semiconductor field effect transistors (MOS-FETs) would be the three dimensionalized version that makes the semiconducting channel vertically wrapped by conformal gate electrodes, also recognized as FinFET. During the past decades, the width of fin (W[Formula: see text] ) in FinFETs has shrunk from about 150 nm to a few nanometers. However, W[Formula: see text] seems to have been levelling off in recent years, owing to the limitation of lithography precision. Here, we show that by adapting a template-growth method, different types of mono-layered two-dimensional crystals are isolated in a vertical manner. Based on this, FinFETs with one atomic layer fin are obtained, with on/off ratios reaching [Formula: see text] . Our findings push the FinFET to the sub 1 nm fin-width limit, and may shed light on the next generation nanoelectronics for higher integration and lower power consumption. |
format | Online Article Text |
id | pubmed-7058032 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2020 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-70580322020-03-06 A FinFET with one atomic layer channel Chen, Mao-Lin Sun, Xingdan Liu, Hang Wang, Hanwen Zhu, Qianbing Wang, Shasha Du, Haifeng Dong, Baojuan Zhang, Jing Sun, Yun Qiu, Song Alava, Thomas Liu, Song Sun, Dong-Ming Han, Zheng Nat Commun Article Since its invention in the 1960s, one of the most significant evolutions of metal-oxide-semiconductor field effect transistors (MOS-FETs) would be the three dimensionalized version that makes the semiconducting channel vertically wrapped by conformal gate electrodes, also recognized as FinFET. During the past decades, the width of fin (W[Formula: see text] ) in FinFETs has shrunk from about 150 nm to a few nanometers. However, W[Formula: see text] seems to have been levelling off in recent years, owing to the limitation of lithography precision. Here, we show that by adapting a template-growth method, different types of mono-layered two-dimensional crystals are isolated in a vertical manner. Based on this, FinFETs with one atomic layer fin are obtained, with on/off ratios reaching [Formula: see text] . Our findings push the FinFET to the sub 1 nm fin-width limit, and may shed light on the next generation nanoelectronics for higher integration and lower power consumption. Nature Publishing Group UK 2020-03-05 /pmc/articles/PMC7058032/ /pubmed/32139679 http://dx.doi.org/10.1038/s41467-020-15096-0 Text en © The Author(s) 2020 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. |
spellingShingle | Article Chen, Mao-Lin Sun, Xingdan Liu, Hang Wang, Hanwen Zhu, Qianbing Wang, Shasha Du, Haifeng Dong, Baojuan Zhang, Jing Sun, Yun Qiu, Song Alava, Thomas Liu, Song Sun, Dong-Ming Han, Zheng A FinFET with one atomic layer channel |
title | A FinFET with one atomic layer channel |
title_full | A FinFET with one atomic layer channel |
title_fullStr | A FinFET with one atomic layer channel |
title_full_unstemmed | A FinFET with one atomic layer channel |
title_short | A FinFET with one atomic layer channel |
title_sort | finfet with one atomic layer channel |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7058032/ https://www.ncbi.nlm.nih.gov/pubmed/32139679 http://dx.doi.org/10.1038/s41467-020-15096-0 |
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