Cargando…
A FinFET with one atomic layer channel
Since its invention in the 1960s, one of the most significant evolutions of metal-oxide-semiconductor field effect transistors (MOS-FETs) would be the three dimensionalized version that makes the semiconducting channel vertically wrapped by conformal gate electrodes, also recognized as FinFET. Durin...
Autores principales: | Chen, Mao-Lin, Sun, Xingdan, Liu, Hang, Wang, Hanwen, Zhu, Qianbing, Wang, Shasha, Du, Haifeng, Dong, Baojuan, Zhang, Jing, Sun, Yun, Qiu, Song, Alava, Thomas, Liu, Song, Sun, Dong-Ming, Han, Zheng |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2020
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7058032/ https://www.ncbi.nlm.nih.gov/pubmed/32139679 http://dx.doi.org/10.1038/s41467-020-15096-0 |
Ejemplares similares
-
Toward quantum FinFET
por: Han, Weihua, et al.
Publicado: (2013) -
Novel 14-nm Scallop-Shaped FinFETs (S-FinFETs) on Bulk-Si Substrate
por: Xu, Weijia, et al.
Publicado: (2015) -
Diamond FinFET without Hydrogen Termination
por: Huang, Biqin, et al.
Publicado: (2018) -
Investigation of the Integration of Strained Ge Channel with Si-Based FinFETs
por: Xu, Buqing, et al.
Publicado: (2022) -
3D modeling of dual-gate FinFET
por: Mil’shtein, Samson, et al.
Publicado: (2012)