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High dielectric ternary oxides from crystal structure prediction and high-throughput screening
The development of new high dielectric materials is essential for advancement in modern electronics. Oxides are generally regarded as the most promising class of high dielectric materials for industrial applications as they possess both high dielectric constants and large band gaps. Most previous re...
Autores principales: | , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7060264/ https://www.ncbi.nlm.nih.gov/pubmed/32144269 http://dx.doi.org/10.1038/s41597-020-0418-6 |
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author | Qu, Jingyu Zagaceta, David Zhang, Weiwei Zhu, Qiang |
author_facet | Qu, Jingyu Zagaceta, David Zhang, Weiwei Zhu, Qiang |
author_sort | Qu, Jingyu |
collection | PubMed |
description | The development of new high dielectric materials is essential for advancement in modern electronics. Oxides are generally regarded as the most promising class of high dielectric materials for industrial applications as they possess both high dielectric constants and large band gaps. Most previous researches on high dielectrics were limited to already known materials. In this study, we conducted an extensive search for high dielectrics over a set of ternary oxides by combining crystal structure prediction and density functional perturbation theory calculations. From this search, we adopted multiple stage screening to identify 441 new low-energy high dielectric materials. Among these materials, 33 were identified as potential high dielectrics favorable for modern device applications. Our research has opened an avenue to explore novel high dielectric materials by combining crystal structure prediction and high throughput screening. |
format | Online Article Text |
id | pubmed-7060264 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2020 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-70602642020-03-19 High dielectric ternary oxides from crystal structure prediction and high-throughput screening Qu, Jingyu Zagaceta, David Zhang, Weiwei Zhu, Qiang Sci Data Data Descriptor The development of new high dielectric materials is essential for advancement in modern electronics. Oxides are generally regarded as the most promising class of high dielectric materials for industrial applications as they possess both high dielectric constants and large band gaps. Most previous researches on high dielectrics were limited to already known materials. In this study, we conducted an extensive search for high dielectrics over a set of ternary oxides by combining crystal structure prediction and density functional perturbation theory calculations. From this search, we adopted multiple stage screening to identify 441 new low-energy high dielectric materials. Among these materials, 33 were identified as potential high dielectrics favorable for modern device applications. Our research has opened an avenue to explore novel high dielectric materials by combining crystal structure prediction and high throughput screening. Nature Publishing Group UK 2020-03-06 /pmc/articles/PMC7060264/ /pubmed/32144269 http://dx.doi.org/10.1038/s41597-020-0418-6 Text en © The Author(s) 2020 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. The Creative Commons Public Domain Dedication waiver http://creativecommons.org/publicdomain/zero/1.0/ applies to the metadata files associated with this article. |
spellingShingle | Data Descriptor Qu, Jingyu Zagaceta, David Zhang, Weiwei Zhu, Qiang High dielectric ternary oxides from crystal structure prediction and high-throughput screening |
title | High dielectric ternary oxides from crystal structure prediction and high-throughput screening |
title_full | High dielectric ternary oxides from crystal structure prediction and high-throughput screening |
title_fullStr | High dielectric ternary oxides from crystal structure prediction and high-throughput screening |
title_full_unstemmed | High dielectric ternary oxides from crystal structure prediction and high-throughput screening |
title_short | High dielectric ternary oxides from crystal structure prediction and high-throughput screening |
title_sort | high dielectric ternary oxides from crystal structure prediction and high-throughput screening |
topic | Data Descriptor |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7060264/ https://www.ncbi.nlm.nih.gov/pubmed/32144269 http://dx.doi.org/10.1038/s41597-020-0418-6 |
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