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High dielectric ternary oxides from crystal structure prediction and high-throughput screening

The development of new high dielectric materials is essential for advancement in modern electronics. Oxides are generally regarded as the most promising class of high dielectric materials for industrial applications as they possess both high dielectric constants and large band gaps. Most previous re...

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Detalles Bibliográficos
Autores principales: Qu, Jingyu, Zagaceta, David, Zhang, Weiwei, Zhu, Qiang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7060264/
https://www.ncbi.nlm.nih.gov/pubmed/32144269
http://dx.doi.org/10.1038/s41597-020-0418-6
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author Qu, Jingyu
Zagaceta, David
Zhang, Weiwei
Zhu, Qiang
author_facet Qu, Jingyu
Zagaceta, David
Zhang, Weiwei
Zhu, Qiang
author_sort Qu, Jingyu
collection PubMed
description The development of new high dielectric materials is essential for advancement in modern electronics. Oxides are generally regarded as the most promising class of high dielectric materials for industrial applications as they possess both high dielectric constants and large band gaps. Most previous researches on high dielectrics were limited to already known materials. In this study, we conducted an extensive search for high dielectrics over a set of ternary oxides by combining crystal structure prediction and density functional perturbation theory calculations. From this search, we adopted multiple stage screening to identify 441 new low-energy high dielectric materials. Among these materials, 33 were identified as potential high dielectrics favorable for modern device applications. Our research has opened an avenue to explore novel high dielectric materials by combining crystal structure prediction and high throughput screening.
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spelling pubmed-70602642020-03-19 High dielectric ternary oxides from crystal structure prediction and high-throughput screening Qu, Jingyu Zagaceta, David Zhang, Weiwei Zhu, Qiang Sci Data Data Descriptor The development of new high dielectric materials is essential for advancement in modern electronics. Oxides are generally regarded as the most promising class of high dielectric materials for industrial applications as they possess both high dielectric constants and large band gaps. Most previous researches on high dielectrics were limited to already known materials. In this study, we conducted an extensive search for high dielectrics over a set of ternary oxides by combining crystal structure prediction and density functional perturbation theory calculations. From this search, we adopted multiple stage screening to identify 441 new low-energy high dielectric materials. Among these materials, 33 were identified as potential high dielectrics favorable for modern device applications. Our research has opened an avenue to explore novel high dielectric materials by combining crystal structure prediction and high throughput screening. Nature Publishing Group UK 2020-03-06 /pmc/articles/PMC7060264/ /pubmed/32144269 http://dx.doi.org/10.1038/s41597-020-0418-6 Text en © The Author(s) 2020 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. The Creative Commons Public Domain Dedication waiver http://creativecommons.org/publicdomain/zero/1.0/ applies to the metadata files associated with this article.
spellingShingle Data Descriptor
Qu, Jingyu
Zagaceta, David
Zhang, Weiwei
Zhu, Qiang
High dielectric ternary oxides from crystal structure prediction and high-throughput screening
title High dielectric ternary oxides from crystal structure prediction and high-throughput screening
title_full High dielectric ternary oxides from crystal structure prediction and high-throughput screening
title_fullStr High dielectric ternary oxides from crystal structure prediction and high-throughput screening
title_full_unstemmed High dielectric ternary oxides from crystal structure prediction and high-throughput screening
title_short High dielectric ternary oxides from crystal structure prediction and high-throughput screening
title_sort high dielectric ternary oxides from crystal structure prediction and high-throughput screening
topic Data Descriptor
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7060264/
https://www.ncbi.nlm.nih.gov/pubmed/32144269
http://dx.doi.org/10.1038/s41597-020-0418-6
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