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Strain relaxation in InAs heteroepitaxy on lattice-mismatched substrates
Strain relaxation processes in InAs heteroepitaxy have been studied. While InAs grows in a layer-by-layer mode on lattice-mismatched substrates of GaAs(111)A, Si(111), and GaSb(111)A, the strain relaxation process strongly depends on the lattice mismatch. The density of threading defects in the InAs...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7067763/ https://www.ncbi.nlm.nih.gov/pubmed/32165693 http://dx.doi.org/10.1038/s41598-020-61527-9 |