Strain relaxation in InAs heteroepitaxy on lattice-mismatched substrates

Strain relaxation processes in InAs heteroepitaxy have been studied. While InAs grows in a layer-by-layer mode on lattice-mismatched substrates of GaAs(111)A, Si(111), and GaSb(111)A, the strain relaxation process strongly depends on the lattice mismatch. The density of threading defects in the InAs...

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Autores principales: Ohtake, Akihiro, Mano, Takaaki, Sakuma, Yoshiki
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7067763/
https://www.ncbi.nlm.nih.gov/pubmed/32165693
http://dx.doi.org/10.1038/s41598-020-61527-9
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author Ohtake, Akihiro
Mano, Takaaki
Sakuma, Yoshiki
author_facet Ohtake, Akihiro
Mano, Takaaki
Sakuma, Yoshiki
author_sort Ohtake, Akihiro
collection PubMed
description Strain relaxation processes in InAs heteroepitaxy have been studied. While InAs grows in a layer-by-layer mode on lattice-mismatched substrates of GaAs(111)A, Si(111), and GaSb(111)A, the strain relaxation process strongly depends on the lattice mismatch. The density of threading defects in the InAs film increases with lattice mismatch. We found that the peak width in x-ray diffraction is insensitive to the defect density, but critically depends on the residual lattice strain in InAs films.
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spelling pubmed-70677632020-03-19 Strain relaxation in InAs heteroepitaxy on lattice-mismatched substrates Ohtake, Akihiro Mano, Takaaki Sakuma, Yoshiki Sci Rep Article Strain relaxation processes in InAs heteroepitaxy have been studied. While InAs grows in a layer-by-layer mode on lattice-mismatched substrates of GaAs(111)A, Si(111), and GaSb(111)A, the strain relaxation process strongly depends on the lattice mismatch. The density of threading defects in the InAs film increases with lattice mismatch. We found that the peak width in x-ray diffraction is insensitive to the defect density, but critically depends on the residual lattice strain in InAs films. Nature Publishing Group UK 2020-03-12 /pmc/articles/PMC7067763/ /pubmed/32165693 http://dx.doi.org/10.1038/s41598-020-61527-9 Text en © The Author(s) 2020 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Ohtake, Akihiro
Mano, Takaaki
Sakuma, Yoshiki
Strain relaxation in InAs heteroepitaxy on lattice-mismatched substrates
title Strain relaxation in InAs heteroepitaxy on lattice-mismatched substrates
title_full Strain relaxation in InAs heteroepitaxy on lattice-mismatched substrates
title_fullStr Strain relaxation in InAs heteroepitaxy on lattice-mismatched substrates
title_full_unstemmed Strain relaxation in InAs heteroepitaxy on lattice-mismatched substrates
title_short Strain relaxation in InAs heteroepitaxy on lattice-mismatched substrates
title_sort strain relaxation in inas heteroepitaxy on lattice-mismatched substrates
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7067763/
https://www.ncbi.nlm.nih.gov/pubmed/32165693
http://dx.doi.org/10.1038/s41598-020-61527-9
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AT manotakaaki strainrelaxationininasheteroepitaxyonlatticemismatchedsubstrates
AT sakumayoshiki strainrelaxationininasheteroepitaxyonlatticemismatchedsubstrates

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