Selective Growth of WSe(2) with Graphene Contacts

Nanoelectronics of two-dimensional (2D) materials and related applications are hindered with critical contact issues with the semiconducting monolayers. To solve these issues, a fundamental challenge is selective and controllable fabrication of p-type or ambipolar transistors with a low Schottky bar...

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Detalles Bibliográficos
Autores principales: Lin, Yu-Ting, Zhang, Xin-Quan, Chen, Po-Han, Chi, Chong-Chi, Lin, Erh-Chen, Rong, Jian-Guo, Ouyang, Chuenhou, Chen, Yung-Fu, Lee, Yi-Hsien
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2020
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7067944/
https://www.ncbi.nlm.nih.gov/pubmed/32166402
http://dx.doi.org/10.1186/s11671-020-3261-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7067944/
https://www.ncbi.nlm.nih.gov/pubmed/32166402
http://dx.doi.org/10.1186/s11671-020-3261-y

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