AlGaN Nanowires for Ultraviolet Light-Emitting: Recent Progress, Challenges, and Prospects

In this paper, we discuss the recent progress made in aluminum gallium nitride (AlGaN) nanowire ultraviolet (UV) light-emitting diodes (LEDs). The AlGaN nanowires used for such LED devices are mainly grown by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD); and variou...

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Detalles Bibliográficos
Autores principales: Zhao, Songrui, Lu, Jiaying, Hai, Xu, Yin, Xue
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7074201/
https://www.ncbi.nlm.nih.gov/pubmed/31979274
http://dx.doi.org/10.3390/mi11020125

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7074201/
https://www.ncbi.nlm.nih.gov/pubmed/31979274
http://dx.doi.org/10.3390/mi11020125

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