The Effect of Multi-Layer Stacking Sequence of TiO(x) Active Layers on the Resistive-Switching Characteristics of Memristor Devices

The oxygen vacancies in the TiO(x) active layer play the key role in determining the electrical characteristics of TiO(x)–based memristors such as resistive-switching behaviour. In this paper, we investigated the effect of a multi-layer stacking sequence of TiO(x) active layers on the resistive-swit...

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Detalles Bibliográficos
Autores principales: Kim, Minho, Yoo, Kungsang, Jeon, Seong-Pil, Park, Sung Kyu, Kim, Yong-Hoon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7074605/
https://www.ncbi.nlm.nih.gov/pubmed/32019257
http://dx.doi.org/10.3390/mi11020154

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7074605/
https://www.ncbi.nlm.nih.gov/pubmed/32019257
http://dx.doi.org/10.3390/mi11020154

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